In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition
Autor: | Qingfang Xu, Rong Tu, Lianmeng Zhang, Kai Liu, Song Zhang, Lixue Xia, Youfeng Lai, Qizhong Li, Meijun Yang, Takashi Goto, Mingxu Han |
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Rok vydání: | 2020 |
Předmět: |
conductive sic
Materials science N-doped < Analytical chemistry preferred orientation Halide chemistry.chemical_element oriented 3c-sic bulk Chemical vapor deposition lcsh:Technology Article lt Electrical resistivity and conductivity Transmittance General Materials Science lcsh:Microscopy lcsh:QC120-168.85 lcsh:QH201-278.5 Dopant lcsh:T Doping n-doped & Microstructure Nitrogen 110> gt chemistry lcsh:TA1-2040 halide laser cvd lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering lcsh:Engineering (General). Civil engineering (General) 110& lcsh:TK1-9971 |
Zdroj: | Materials, Vol 13, Iss 2, p 410 (2020) Materials |
ISSN: | 1996-1944 |
DOI: | 10.3390/ma13020410 |
Popis: | Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, -oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared -oriented N-doped 3C-SiC, the high-speed preparation of -oriented N-doped 3C-SiC bulks further broadens its application field. |
Databáze: | OpenAIRE |
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