Using quantum dot photoluminescence for load detection
| Autor: | Thomas Gessner, M. Moebius, Reinhard R. Baumann, Thomas Otto, Joerg Martin, Melinda Hartwig |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Quenching
Photoluminescence Materials science business.industry General Physics and Astronomy Charge (physics) 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Organic semiconductor Semiconductor Stack (abstract data type) Quantum dot 0103 physical sciences Optoelectronics 010306 general physics 0210 nano-technology business lcsh:Physics Voltage |
| Zdroj: | AIP Advances, Vol 6, Iss 8, Pp 085309-085309-6 (2016) |
| Popis: | We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination. |
| Databáze: | OpenAIRE |
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