Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint
| Autor: | Luca Selmi, Carlotta Guiducci, Thomas Ernst, Pierpaolo Palestri, Enrico Accastelli, Paolo Scarbolo |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
tri-gate transistors
Silicon Materials science Transistors Electronic lcsh:Biotechnology Clinical Biochemistry Nanowire chemistry.chemical_element Nanotechnology 02 engineering and technology Biosensing Techniques Hardware_PERFORMANCEANDRELIABILITY Signal-To-Noise Ratio 01 natural sciences Article law.invention silicon nanowires ISFET pH sensors 1/f noise Footprint (electronics) law lcsh:TP248.13-248.65 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electronic circuit 010302 applied physics Nanowires Transistor General Medicine Hydrogen-Ion Concentration 021001 nanoscience & nanotechnology CMOS chemistry Nanometre 0210 nano-technology Hardware_LOGICDESIGN |
| Zdroj: | Biosensors; Volume 6; Issue 1; Pages: 9 Biosensors Biosensors, Vol 6, Iss 1, p 9 (2016) |
| Popis: | The signal-to-noise ratio of planar ISFET pH sensors deteriorates when reducing the area occupied by the device, thus hampering the scalability of on-chip analytical systems which detect the DNA polymerase through pH measurements. Top-down nano-sized tri-gate transistors, such as silicon nanowires, are designed for high performance solid-state circuits thanks to their superior properties of voltage-to-current transduction, which can be advantageously exploited for pH sensing. A systematic study is carried out on rectangular-shaped nanowires developed in a complementary metal-oxide-semiconductor (CMOS)-compatible technology, showing that reducing the width of the devices below a few hundreds of nanometers leads to higher charge sensitivity. Moreover, devices composed of several wires in parallel further increase the exposed surface per unit footprint area, thus maximizing the signal-to-noise ratio. This technology allows a sub milli-pH unit resolution with a sensor footprint of about 1 mu m(2), exceeding the performance of previously reported studies on silicon nanowires by two orders of magnitude. |
| Databáze: | OpenAIRE |
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