Surface nano-patterning for the bottom-up growth of iii-v semiconductor nanowire ordered arrays
| Autor: | Valentina Zannier, Francesco Rossella, Lucia Sorba, Valeria Demontis |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Surface (mathematics)
Substrate patterning Materials science business.industry General Chemical Engineering Nanowire Metamaterial semiconductor nanowire ordered arrays substrate patterning nanowire metasurfaces Nanotechnology Substrate (electronics) Review Chemistry Semiconductor Nano Nanowire metasurfaces Semiconductor nanowire ordered arrays General Materials Science business QD1-999 |
| Zdroj: | Nanomaterials (Basel) 11 (2021): 2079-1–2079-26. doi:10.3390/nano11082079 info:cnr-pdr/source/autori:Demontis V.; Zannier V.; Sorba L.; Rossella F./titolo:Surface nano-patterning for the bottom-up growth of iii-v semiconductor nanowire ordered arrays/doi:10.3390%2Fnano11082079/rivista:Nanomaterials (Basel)/anno:2021/pagina_da:2079-1/pagina_a:2079-26/intervallo_pagine:2079-1–2079-26/volume:11 Nanomaterials Nanomaterials, Vol 11, Iss 2079, p 2079 (2021) |
| DOI: | 10.3390/nano11082079 |
| Popis: | Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials. |
| Databáze: | OpenAIRE |
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