Validation of NIEL for >1 MeV electrons in silicon using the CCD47-20
| Autor: | R. Burgon, P. H. Smith, Ben Dryer, Andrew D. Holland, Jason Gow, T. Nuns, Neil J. Murray, Konstantin D. Stefanov, David Hall |
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| Přispěvatelé: | The Open University [Milton Keynes] (OU), ONERA - The French Aerospace Lab [Toulouse], ONERA, Dynamic Imaging Analytics Limited |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Silicon
chemistry.chemical_element Electron NON-IONISING ENERGY LOSS Radiation PROTON 01 natural sciences law.invention 010309 optics law 0103 physical sciences Electron beam processing Radiation damage Irradiation SILICON NIEL CCD Physics 010308 nuclear & particles physics business.industry RADIATION EFFECTS GAMMA [PHYS.PHYS.PHYS-SPACE-PH]Physics [physics]/Physics [physics]/Space Physics [physics.space-ph] Photodiode CMOS chemistry Optoelectronics ELECTRON business |
| Zdroj: | High Energy, Optical, and Infrared Detectors for Astronomy VII High Energy, Optical, and Infrared Detectors for Astronomy VII, 9915, 9 p., 2016, ⟨10.1117/12.2233975⟩ |
| ISSN: | 1996-756X |
| Popis: | International audience; For future space missions that are visiting hostile electron radiation environments, such as ESA’s JUICE mission, it is important to understand the effects of electron irradiation on silicon devices. This paper outlines a study to validate and improve upon the Non-Ionising Energy Loss (NIEL) model for high energy electrons in silicon using Charge Coupled Devices (CCD), CMOS Imaging Sensors (CIS) and PIPS photodiodes. Initial results of radiation effects in an e2v technologies CCD47-20 after irradiation to 10 krad of 1 MeV electrons are presented with future results and analysis to be presented in future publications. |
| Databáze: | OpenAIRE |
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