Characterization and ellipsometric investigation of high-quality ZnO and ZnO(Ga2O3) thin alloys by reactive electron-beam co-evaporation technique
| Autor: | Jean Podlecki, Youssef Zaatar, R. Al Asmar, J. P. Atanas, Alain Foucaran |
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| Přispěvatelé: | Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Université Saint-Esprit de Kaslik (USEK) |
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
Photoluminescence
Materials science X ray diffraction Analytical chemistry chemistry.chemical_element 02 engineering and technology Zinc 01 natural sciences Electron beam physical vapor deposition Crystallinity Optics Edge emission Electron beam evaporation 0103 physical sciences Zinc oxide Near ultraviolet radiation Thin film Gallium ComputingMilieux_MISCELLANEOUS 010302 applied physics Gallium addition Vacancy Ellipsometry business.industry General Engineering 021001 nanoscience & nanotechnology Evaporation (deposition) Acceptor [SPI.TRON]Engineering Sciences [physics]/Electronics chemistry Deep level Conduction band 0210 nano-technology business Interstitial Optical characteristic |
| Zdroj: | Microelectronics Journal Microelectronics Journal, Elsevier, 2006, 37 (10), pp.1080-1085. ⟨10.1016/j.mejo.2006.03.005⟩ |
| ISSN: | 0026-2692 |
| DOI: | 10.1016/j.mejo.2006.03.005⟩ |
| Popis: | International audience; High-quality ZnO(Ga2O3) thin films have been co-evaporated by reactive electron-beam evaporation in an oxygen environment. The effect of Ga2O3 on the structural and optical properties has been investigated. X-ray diffraction (XRD) measurements have shown that the ZnO(Ga2O3) alloys are c-axis-oriented. The alloy containing 28% of Ga2O3 showed the best crystallinity. Photoluminescence on ZnO(28%Ga2O3) reveals an enhancement of the ultraviolet near band edge emission at 380 nm while the intensity of the deep-level emissions weakens. A reduction of the oxygen vacancies as well as the reduction of the zinc interstitials with gallium may explain this effect. Thus, the possibility of transitions of electron in the conduction band to a deep acceptor level due to zinc interstitials may decrease. Finally, ellipsometric measurements show that the optimum weight concentration of gallium oxide in the alloys is 28%, thus correlating with the XRD and photoluminescence measurements |
| Databáze: | OpenAIRE |
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