Effect of an external bias voltage on the photoelectric properties of silicon MIS/IL structures
| Autor: | I. I. Mel’nik, V. Yu. Erokhov, Ya. S. Budzhak |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Silicon
business.industry Chemistry Photoresistor External bias chemistry.chemical_element Inversion (meteorology) Biasing Photoelectric effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention law Optoelectronics business Voltage |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187032 |
| Popis: | The mechanism by which an external bias voltage influences the photoelectric properties of Al/tunneling-thin SiO2/p-Si structures with an induced inversion layer is investigated theoretically. A characteristic feature of the structure studied is the presence of a special inversion grid. Between this grid and the substrate a positive voltage is applied. Relations expressing the functional dependence on the bias voltage of the structure parameters and the output electrical characteristics of photocells, which are based on it, are obtained. The results of numerical calculations illustrating the effectiveness of using a bias voltage to increase the efficiency of photocells based on Al/SiO2/p-Si structures with an induced inversion layer are presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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