A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs
| Autor: | Alejandro Paredes Camacho, Hamidreza Ghorbani, Vicent Sala, José Luis Romeral Martínez |
|---|---|
| Přispěvatelé: | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. MCIA - Motion Control and Industrial Applications Research Group |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Computer Networks and Communications
020209 energy lcsh:TK7800-8360 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY Electromagnetisme IGBT Electromagnetic interference Switching time Electromagnetism Control theory 0202 electrical engineering electronic engineering information engineering Gate driver Hardware_INTEGRATEDCIRCUITS Power semiconductor device gate driver (GD) Electrical and Electronic Engineering switching losses Physics lcsh:Electronics 020208 electrical & electronic engineering Enginyeria electrònica [Àrees temàtiques de la UPC] Insulated-gate bipolar transistor Hardware and Architecture Control and Systems Engineering electromagnetic interference (EMI) Signal Processing Transient (oscillation) Gate driver (GD) Voltage |
| Zdroj: | Electronics Volume 8 Issue 2 Recercat. Dipósit de la Recerca de Catalunya instname UPCommons. Portal del coneixement obert de la UPC Universitat Politècnica de Catalunya (UPC) Electronics, Vol 8, Iss 2, p 144 (2019) |
| ISSN: | 2079-9292 |
| DOI: | 10.3390/electronics8020144 |
| Popis: | The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke electromagnetic interference (EMI). This paper proposes a new closed-loop gate driver to improve switching trajectory in insulated gate bipolar transistors (IGBTs) at the hard switching condition. The proposed closed-loop gate driver is based on an active gate voltage control method, which deals with emitter voltage (VEe) for controlling diC/dt and gets feedback from the output voltage (vCE) in order to control dvCE/dt. The sampled voltage signals modify the profile of the applied gate voltage (vgg). As a result, the desired gate driver (GD) improves the switching transients with minimum switching loss. The operation principle and implementation of the controller in the GD are thoroughly described. It can be observed that the new GD controls both dvCE/dt and diC/dt accurately independent of the variable parameters. The new control method is verified by experimental results. As a current issue, the known trade-off between switching losses and EMI is improved by this simple and effective control method. |
| Databáze: | OpenAIRE |
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