Changes of Graphene Transistors Electronic Properties by Organic Deposition

Autor:	Nekrasov, Nikita P., Omerović, Nejra, Bobrinetskiy, Ivan I.
Rok vydání:	2019
DOI:	10.5281/zenodo.4007094
Popis:	CVD grown graphene was transferred on silicon substrate and transistor structured was formed with Cr/Au contacts. In this work, we used polzaniline (PANI), quatrothiophene (HEX) and perylene dicarboximide (PDI). Ink with these dyes consisted n-methylpyrrolidone (NMP), toluene, chlorobenzene as solvents and isopropanol as thickener. Prepared inks were printed with ink-jet printer Dimatix 3000.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e20c47348dc9473232dd65568140812 Zobrazit plný text záznamu