Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy
| Autor: | Sertaç Ural, Ömer Ahmet Kayal, Engin Arslan, Ekmel Ozbay, S¸emsettin Altındal, Mustafa Kemal Öztürk |
|---|---|
| Přispěvatelé: | Özbay, Ekmel |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Band gap Schottky barrier Analytical chemistry Thermionic emission 02 engineering and technology 01 natural sciences Standard deviation Metal 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Instrumentation 010302 applied physics business.industry Process Chemistry and Technology Schottky diode Atmospheric temperature range 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor visual_art visual_art.visual_art_medium 0210 nano-technology business |
| Zdroj: | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.5045259 |
| Popis: | The current-conduction mechanisms of the as-deposited and annealed at 450 °C (Ni/Pt) Schottky contacts on AlInGaN quaternary alloy have been investigated in the temperature range of 80–320 K. The zero-bias barrier height (BH) (ΦB0) and ideality factor (n) of them were evaluated using thermionic emission (TE) theory. The ΦB0 and n values calculated from the I-V characteristics show a strong temperature dependence. Such behavior of ΦB0 and n is attributed to Schottky barrier inhomogeneities. Therefore, both the ΦB0 vs n and ΦB0 vs q/2kT plots were drawn to obtain evidence on the Gaussian distribution (GD) of the barrier height at the metal/semiconductor interface. These plots show two different linear parts at low and intermediate temperatures for as-deposited and annealed Schottky contacts. Thus, the mean value of ΦB0 and standard deviation (σ0) was calculated from the linear parts of the ΦB0 vs q/kT plots for both samples. The values of the effective Richardson constant ( A ∗) and mean BH were obtained from the modified Richardson plots which included the effect of barrier inhomogeneity. These values of Richardson constant and barrier height for as-deposited contacts were found to be 19.9 A cm−2 K−2 and 0.59 eV, respectively, at low temperature, but 43.3 A cm−2 K−2 and 1.32 eV, respectively, at intermediate temperatures. These values of Richardson constant and barrier height for annealed contacts were found to be 19.6 A cm−2 K−2 and 0.37 eV, respectively, at low temperature, but 42.9 A cm−2 K−2 and 1.54 eV, respectively, at intermediate temperatures. It is clear that the value of the Richardson constant obtained for as-deposited and annealed samples by using double-GD for intermediate temperatures is close to the theoretical value of AlInGaN (=44.7 A cm−2 K−2). Therefore, I-V-T characteristics for the as-deposited and annealed Schottky contacts in the temperature range of 80–320 K can be successfully explained based on TE theory with double-GD of the BHs.The current-conduction mechanisms of the as-deposited and annealed at 450 °C (Ni/Pt) Schottky contacts on AlInGaN quaternary alloy have been investigated in the temperature range of 80–320 K. The zero-bias barrier height (BH) (ΦB0) and ideality factor (n) of them were evaluated using thermionic emission (TE) theory. The ΦB0 and n values calculated from the I-V characteristics show a strong temperature dependence. Such behavior of ΦB0 and n is attributed to Schottky barrier inhomogeneities. Therefore, both the ΦB0 vs n and ΦB0 vs q/2kT plots were drawn to obtain evidence on the Gaussian distribution (GD) of the barrier height at the metal/semiconductor interface. These plots show two different linear parts at low and intermediate temperatures for as-deposited and annealed Schottky contacts. Thus, the mean value of ΦB0 and standard deviation (σ0) was calculated from the linear parts of the ΦB0 vs q/kT plots for both samples. The values of the effective Richardson constant ( A ∗) and mean BH were obtained ... |
| Databáze: | OpenAIRE |
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