Surpassing the Exciton Diffusion Limit in Single-Walled Carbon Nanotube Sensitized Solar Cells
| Autor: | Franziska Lissel, Ting Lei, Michael Vosgueritchian, John W. F. To, Zhenan Bao, Ghada I. Koleilat, Tian Xie, Debora W. Lin, Pei Lin, Yue Zhang, Kemar England, Yan Zhou |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Band gap Infrared Exciton Photovoltaic system General Engineering General Physics and Astronomy Photodetector Nanotechnology 02 engineering and technology Carbon nanotube 010402 general chemistry 021001 nanoscience & nanotechnology 7. Clean energy 01 natural sciences Acceptor 0104 chemical sciences law.invention law General Materials Science 0210 nano-technology HOMO/LUMO |
| Zdroj: | ACS Nano. 10:11258-11265 |
| ISSN: | 1936-086X 1936-0851 |
| Popis: | Semiconducting single-walled carbon nanotube (s-SWNT) light sensitized devices, such as infrared photodetectors and solar cells, have recently been widely reported. Despite their excellent individual electrical properties, efficient carrier transport from one carbon nanotube to another remains a fundamental challenge. Specifically, photovoltaic devices with active layers made from s-SWNTs have suffered from low efficiencies caused by three main challenges: the overwhelming presence of high-bandgap polymers in the films, the weak bandgap offset between the LUMO of the s-SWNTs and the acceptor C60, and the limited exciton diffusion length from one SWNT to another of around 5 nm that limits the carrier extraction efficiency. Herein, we employ a combination of processing and device architecture design strategies to address each of these transport challenges and fabricate photovoltaic devices with s-SWNT films well beyond the exciton diffusion limit of 5 nm. While our solution processing method minimizes the p... |
| Databáze: | OpenAIRE |
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