High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3films grown by metallo-organic chemical vapor deposition (MOCVD)

Autor:	Juhee Seo, Byung-ki Cheong, Suyoun Lee, Hyunwoo Jin, Seong Keun Kim, Kwang-Chon Kim, Jin Sang Kim
Rok vydání:	2015
Předmět:	Electron mobility Materials science Magnetoresistance Condensed matter physics Nanotechnology Electron Chemical vapor deposition symbols.namesake Quantum transport Effective mass (solid-state physics) Dirac fermion symbols General Materials Science Metalorganic vapour phase epitaxy
Zdroj:	Nanoscale. 7:17359-17365
ISSN:	2040-3372 2040-3364
DOI:	10.1039/c5nr05491e
Popis:	We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ∼ 22 000 cm(2) V(-1) s(-1), magnetoresistance ∼ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickness. In addition, the Shubnikov-de Haas oscillation was observed, from which the effective mass was calculated to be consistent with the known value. From the thickness dependence of the Shubnikov-de Haas oscillation, it was found that a two dimensional electron gas with the conventional electron nature coexists with the topological Dirac fermion states and dominates the carrier transport in the Bi2Te3 film with thickness higher than 300 nm. These results are attributed to the intrinsic nature of Bi2Te3 in the high-mobility transport regime obtained by a deliberate choice of the substrate and the growth conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2df6aa3a731c538705840e54116c4673 https://doi.org/10.1039/c5nr05491e Zobrazit plný text záznamu