| Autor: |
E. Khutsishvili, Tengiz Qamushadze, Zurab Chubinashvili, Georgy Kekelidze, N. Kekelidze, Nana Kobulashvili |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
European Journal of Engineering and Technology Research. 6:31-35 |
| ISSN: |
2506-8016 |
| Popis: |
Effective functioning of electronics in high- radiation environment requires developing of novel semiconductor systems with radiation-tolerant properties. In given work, in search of semiconductor materials with immunity to radiation, investigations have been focused on InPxAs1-x alloys. Investigating of electrical and optical characteristics and physical processes, flowing in heavily irradiated InPxAs1-x alloys under high fluences of high-energy electrons and fast neutrons, let us create new generation of radiation-resistant semiconductor materials for electrical engineering application in hard-radiation environment. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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