Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices: An examination of interface disorder
| Autor: | Loren Pfeiffer, G. S. Spencer, Jose Menendez, Ken W. West |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Condensed matter physics Period (periodic table) Phonon business.industry Superlattice Gaas alas Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science symbols.namesake Optics symbols Supercell (crystal) business Raman spectroscopy Raman scattering |
| Zdroj: | Physical Review B. 52:8205-8218 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.52.8205 |
| Popis: | The effect of cation intermixing on the Raman spectrum of GaAs-AlAs superlattices has been investigated. Experimental measurements are compared with theoretical predictions based on fully three-dimensional supercell calculations. The accuracy of the modeled Raman spectra makes it possible to evaluate different mechanisms of interface disorder on a quantitative basis. In particular, a detailed comparison is made between the compositional profiles predicted by gallium-surface-segregation models and those resulting from simple cation intermixing at the GaAs-AlAs interfaces. Best agreement with experiment is obtained for the predictions of the surface-segregation models. These models, however, are unable to account simultaneously for the growth temperature dependence of the GaAs-like and AlAs-like Raman spectra, even when the kinetics of the disordering process is fully taken into account. |
| Databáze: | OpenAIRE |
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