High Performance and High Current Integrated Inductors using a Double Ultra Thick Copper Module in an Advanced 65 nm RF CMOS Technology
| Autor: | J. C. Giraudin, O. Noblanc, Ph. Benech, Daniel Gloria, C. Pastore, Frederic Gianesello |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2009 |
| Předmět: |
Engineering
business.industry 020208 electrical & electronic engineering RF power amplifier Electrical engineering chemistry.chemical_element 020206 networking & telecommunications 02 engineering and technology Inductor Copper Power (physics) Back end of line chemistry CMOS Q factor 0202 electrical engineering electronic engineering information engineering Optoelectronics Radio frequency [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | SIRF 2009 SIRF 2009, Jan 2009, San Diego, Californie, United States |
| Popis: | This paper presents high Q and high current on-chip inductors manufactured in an innovative Radio Frequency (RF) Back End Of Line (BEOL), made of two 3 µm thick top copper levels, integrated in an Advanced Low Power 65 nm RF CMOS technology. Achieved inductors using this optimized RF BEOL are firstly reported, compared with those using one single thick copper level BEOL, and benchmarked with current ones fabricated in a standard CMOS BEOL. According to measurement results, reported inductors offer quality factor Q greater than 22 and current capability Imax up to 20 mA/µm @ 125 °C, performances suitable for RF power applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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