Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application

Autor:	Erik Trybom, Henry H. Radamson, Pooya Tabib Zadeh Adibi, Luigi Di Benedetto, Mohammad Shayestehaminzadeh, Mohammadreza Kolahdouz, Ali Afshar Farniya
Rok vydání:	2009
Předmět:	Junction Materials science business.industry CMOS Doping chemistry.chemical_element Nanotechnology CVD Epitaxy chemistry Pattern sensitivity Optoelectronics business Boron Layer (electronics) CMOS Junction Boron CVD Pattern sensitivity
Zdroj:	ECS Transactions. 25:81-88
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3207578
Popis:	This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d69ab491b6b318f2e81e4da3fa8d056 https://doi.org/10.1149/1.3207578 Zobrazit plný text záznamu