Self-limiting processes in thermal atomic layer etching of nickel by hexafluoroacetylacetone
| Autor: | Abdulrahman H. Basher, Satoshi Hamaguchi, Ikutaro Hamada |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Hexafluoroacetylacetone General Engineering General Physics and Astronomy chemistry.chemical_element Self limiting 01 natural sciences Nickel chemistry.chemical_compound chemistry Chemical engineering Etching (microfabrication) 0103 physical sciences Thermal Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 59(9):090905 |
| ISSN: | 1347-4065 |
| Popis: | Abdulrahman H. Basher, Ikutaro Hamada, and Satoshi Hamaguchi. Jpn. J. Appl. Phys. 59 090905. In thermal atomic layer etching (ALE) of Ni, a thin oxidized Ni layer is removed by a hexafluoroacetylacetone (hfacH) etchant gas at an elevated surface temperature, and etching ceases when a metallic Ni surface appears (self-limiting step). However, atomistic details of the self-limiting step was not well understood. With periodic density-functional-theory calculations, it is found that hfacH molecules barrierlessly adsorb and tend to decompose on a metallic Ni surface, in contrast to the case of a NiO surface, where they can form volatile Ni(hfac)2. Our results clarify the origin of the self-limiting process in the thermal ALE. |
| Databáze: | OpenAIRE |
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