Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators
| Autor: | Blair Morrison, Sven Rogge, Gabriele G. de Boo, Miloš Rančić, Benjamin J. Eggleton, Chunming Yin, Alvaro Casas Bedoya, Bin-Bin Xu, Jeffrey C. McCallum, Matthew Sellars, Brett C. Johnson |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon General Physics and Astronomy chemistry.chemical_element FOS: Physical sciences 02 engineering and technology Applied Physics (physics.app-ph) 01 natural sciences law.invention Resonator law 0103 physical sciences 010306 general physics Absorption (electromagnetic radiation) business.industry Doping Transistor Physics - Applied Physics 021001 nanoscience & nanotechnology chemistry Electrode Optoelectronics 0210 nano-technology business Refractive index Layer (electronics) Physics - Optics Optics (physics.optics) |
| DOI: | 10.48550/arxiv.2011.14792 |
| Popis: | Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 10$^5$. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform. Comment: 6 figures |
| Databáze: | OpenAIRE |
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