Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation
| Autor: | Dominique Ballutaud, Jean-François Lelièvre, J. Dupuis, Mustapha Lemiti, Erwann Fourmond |
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| Přispěvatelé: | INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2008 |
| Předmět: |
Silicon oxynitride
Materials science Passivation Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element 02 engineering and technology 7. Clean energy 01 natural sciences chemistry.chemical_compound Plasma-enhanced chemical vapor deposition 0103 physical sciences Materials Chemistry Wafer 010302 applied physics Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Silicon nitride [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] 0210 nano-technology Stoichiometry |
| Zdroj: | Thin Solid Films Thin Solid Films, Elsevier, 2008, pp.6954-6958. ⟨10.1016/j.tsf.2007.12.026⟩ |
| ISSN: | 0040-6090 |
| Popis: | International audience; Hydrogenated silicon oxynitride (SiON) could be used in combination with silicon nitride (SiN) to create multi-layer antireflection coatings for silicon solar cells. It could also be used as a passivation layer, especially on the back side of the cell. This work deals with the passivation effect obtained on silicon surface by SiON layer deposited by Low Frequency Plasma Enhanced Chemical Vapour Deposition (LF-PECVD). SiON layers of different compositions have been deposited by varying the gas flow mixture (NH3, SiH4 and N2O) in the reactor. Infrared and X-ray photon-electron spectroscopy were made to determine the chemical structure of SiON layer. Minority carrier lifetimes were measured by the photoconductance decay method (PCD) before and after a rapid thermal anneal. Effective lifetime, measured on 5ohm.cm FZ-silicon wafers, can reach up to several hundreds microseconds, depending on the stoichiometry of the SiON layer. Low oxygen content samples (close to SiN layer) exhibit a good surface passivation of 250??s but after annealing, this value is critically reduced to 6??s. The opposite situation is observed for oxygen-rich layers: the effective lifetime increases from 10µs to 150µs. These behaviours could be partly explained by the composition of SiON, the evolution of the main peaks values of the FTIR spectra and the disappearance of Si-H bonds with anneal. |
| Databáze: | OpenAIRE |
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