Mobility enhancement in graphene by in situ reduction of random strain fluctuations
| Autor: | Takashi Taniguchi, Simon Zihlmann, David I. Indolese, Andreas Baumgartner, Kenji Watanabe, Péter Makk, Christian Schönenberger, Lujun Wang |
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| Rok vydání: | 2019 |
| Předmět: |
In situ
Electron mobility Materials science Condensed matter physics Strain (chemistry) Condensed Matter - Mesoscale and Nanoscale Physics Graphene Doping General Physics and Astronomy FOS: Physical sciences 01 natural sciences law.invention Reduction (complexity) symbols.namesake Quality (physics) law 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) symbols 010306 general physics Raman spectroscopy |
| Zdroj: | Physical Review Letters |
| DOI: | 10.48550/arxiv.1909.13484 |
| Popis: | Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When $\ensuremath{\sim}0.2%$ of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by $\ensuremath{\sim}35%$ is observed while the residual doping reduces by $\ensuremath{\sim}39%$. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements. |
| Databáze: | OpenAIRE |
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