Two-photon laser-assisted device alteration in CMOS integrated circuits using linearly, circularly and radially polarized light
| Autor: | T. Crawford, C. Farrell, Christophe Dorrer, Marius Rutkauskas, Kenneth L. Marshall, T. R. Lundquist, Praveen Vedagarbha, Dan Bodoh, Kent Erington, Derryck T. Reid |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Laser-assisted device alteration
Materials science Laser scanning Integrated circuit 02 engineering and technology Elliptical polarization 01 natural sciences law.invention 010309 optics Optics Two-photon excitation microscopy law 0103 physical sciences Electrical and Electronic Engineering Safety Risk Reliability and Quality Image resolution Circular polarization Physics Polarization rotator Linear polarization business.industry Condensed Matter Physics 021001 nanoscience & nanotechnology Polarization (waves) Ray Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials CMOS Optoelectronics 0210 nano-technology business |
| Zdroj: | Conference on Lasers and Electro-Optics. |
| DOI: | 10.1364/cleo_at.2016.atu3j.8 |
| Popis: | The rapidly developing semiconductor industry demands constant innovations in optoelectronic imaging of semiconductor integrated circuits to keep up with continuing device scaling. It was recently shown that two-photon laser-assisted device alteration (2pLADA) can deliver precision fault isolation. Here we describe an investigation into the influence of the incident light polarization on the 2pLADA spatial resolution. Linear polarization provides a highly confined but elliptical focal spot, while circular polarization diminishes the lateral resolution but benefits from a symmetrical focal spot. Radially polarized light potentially provides the highest lateral imaging resolution in all directions at the expense of the longitudinal resolution. By comparing 2pLADA results obtained using linear, circular and radial polarizations we show that certain polarizations have advantages in particular applications. Therefore a polarization optimized 2pLADA tool can achieve a sufficiently high performance to isolate faults of transistors separated by as little as 100 nm and maybe smaller. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|