Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory
| Autor: | Woon-San Ko, Jun-Kyo Jeong, Jae-Young Sung, Ga-Won Lee, Hi-Deok Lee, Ki-Ryung Nam |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Annealing (metallurgy) SONOS Surface finish engineering.material Article Flash memory flash memory chemistry.chemical_compound Hardware_GENERAL TJ1-1570 Hardware_INTEGRATEDCIRCUITS Surface roughness Mechanical engineering and machinery Electrical and Electronic Engineering Data retention x-ray photoelectron spectroscopy (XPS) data retention roughness atomic force microscope (AFM) business.industry Mechanical Engineering poly silicon Threshold voltage Polycrystalline silicon Silicon nitride chemistry Control and Systems Engineering deuterium annealing engineering Optoelectronics business |
| Zdroj: | Micromachines Micromachines, Vol 12, Iss 1401, p 1401 (2021) Volume 12 Issue 11 |
| ISSN: | 2072-666X |
| Popis: | In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is enlarged with the number of interface traps and the data retention properties are deteriorated in the device with underlying poly-Si channel which can be serious problem in gate-last 3D NAND flash memory architecture. To improve the memory performance, high pressure deuterium (D2) annealing is suggested as a low-temperature process and the program window and threshold voltage shift in data retention mode is compared before and after the D2 annealing. The suggested curing is found to be effective in improving the device reliability. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|