Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors
Autor: | M. Parakh, R. Pokharel, K. Dawkins, S. Devkota, J. Li, S. Iyer |
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Rok vydání: | 2022 |
Předmět: | |
Zdroj: | Nanoscale advances. 4(18) |
ISSN: | 2516-0230 |
Popis: | In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented. Our device exhibits a low breakdown voltage ( |
Databáze: | OpenAIRE |
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