Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes
| Autor: | Livio Fanò, Arianna Morozzi, Anna Grazia Monteduro, Cinzia Talamonti, Giovanni Verzellesi, Andrea Scorzoni, Maria Ionica, Giuseppe Maruccio, Matthew Large, Ilaria Cupparo, Leonello Servoli, Marco Petasecca, M. Menichelli, M. Bizzarri, Omar Ali Hammad, Nicolas Wyrsch, Michele Crivellari, P. Cirrone, Anna Paola Caricato, Daniele Passeri, Maurizio Boscardin, A. Rossi, S Dunand, Giacomo Cuttone, Silvia Rizzato, M. Caprai, A. Papi, Keida Kanxheri, Francesco Moscatelli |
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| Přispěvatelé: | Menichelli, M., Bizzarri, M., Boscardin, M., Caprai, M., Caricato, A. P., Cirrone, G. A. P., Crivellari, M., Cupparo, I., Cuttone, G., Dunand, S., Fano, L., Ali, O. H., Ionica, M., Kanxheri, K., Large, M., Maruccio, G., Monteduro, A. G., Moscatelli, F., Morozzi, A., Papi, A., Passeri, D., Petasecca, M., Rizzato, S., Rossi, A., Scorzoni, A., Servoli, L., Talamonti, C., Verzellesi, G., Wyrsch, N. |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Amorphous silicon
Materials science Fabrication Position detectors QC1-999 hydrogenated amorphous silicon Chemical vapor deposition QC770-798 chemistry.chemical_compound solid-state detectors Planar Plasma-enhanced chemical vapor deposition Nuclear and particle physics. Atomic energy. Radioactivity Solid-state detectors acoustics Instrumentation Radiation hardening Position detector Diode business.industry Physics Detector position detectors 3D detector Hydrogenated amorphous silicon Radiation hard detector radiation hard detector Ion implantation chemistry Optoelectronics business |
| Zdroj: | Instruments, Vol 5, Iss 32, p 32 (2021) Instruments 5 (2021). doi:10.3390/instruments5040032 info:cnr-pdr/source/autori:Menichelli, Mauro; Bizzarri, Marco; Boscardin, Maurizio; Caprai, Mirco; Caricato, Anna Paola; Cirrone, Giuseppe Antonio Pablo; Crivellari, Michele; Cupparo, Ilaria; Cuttone, Giacomo; Dunand, Silvain; Fanò, Livio; Alì, Omar Hammad; Ionica, Maria; Kanxheri, Keida; Large, Matthew; Maruccio, Giuseppe; Monteduro, Anna Grazia; Moscatelli, Francesco; Morozzi, Arianna; Papi, Andrea; Passeri, Daniele; Petasecca, Marco; Rizzato, Silvia; Rossi, Alessandro; Scorzoni, Andrea; Servoli, Leonello; Talamonti, Cinzia; Verzellesi, Giovanni; Wyrsch, Nicolas/titolo:Fabrication of a hydrogenated amorphous silicon detector in 3-d geometry and preliminary test on planar prototypes/doi:10.3390%2Finstruments5040032/rivista:Instruments/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume:5 Instruments Volume 5 Issue 4 |
| DOI: | 10.3390/instruments5040032 |
| Popis: | Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety of substrates. Devices employing a-Si:H technologies have been used to detect many different kinds of radiation, namely, minimum ionizing particles (MIPs), X-rays, neutrons, and ions, as well as low-energy protons and alphas. However, the detection of MIPs using planar a-Si:H diodes has proven difficult due to their unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance, and limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations, the 3D-SiAm collaboration proposes employing a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while preserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with a consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts are illustrated. |
| Databáze: | OpenAIRE |
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