Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires
| Autor: | Reza R. Zamani, Sebastian Lehmann, Kimberly A. Dick, Sepideh Gorji Ghalamestani, Marcus Tornberg, Erik K. Mårtensson |
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| Rok vydání: | 2016 |
| Předmět: |
Nanostructure
Materials science Mechanical Engineering Nanowire Nucleation chemistry.chemical_element Bioengineering Nanotechnology Heterojunction 02 engineering and technology General Chemistry Crystal structure 010402 general chemistry 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences 0104 chemical sciences chemistry Mechanics of Materials Antimonide General Materials Science Electrical and Electronic Engineering 0210 nano-technology Tin |
| Zdroj: | Nanotechnology. 27(17) |
| ISSN: | 1361-6528 |
| Popis: | The particle-assisted epitaxial growth of antimonide-based nanowires has mainly been realized using gold as the seed material. However, the Au-seeded epitaxial growth of antimonide-based nanowires such as GaSb nanowires presents several challenges such as for example direct nucleation issues and crystal structure tuning. Therefore, it is of great importance to understand the role of seed material choice and properties in the growth behavior of antimonide-based nanowires to obtain a deeper understanding and a better control on their formation processes. In this report, we have investigated the epitaxial growth of GaSb and GaAs-GaSb nanowires using in situ-formed tin seeds by means of metalorganic vapor phase epitaxy technique. This comprehensive report covers the growth of in situ-formed tin seeds and Sn-seeded GaSb nanowires on both GaAs and GaSb (111)B substrates, as well as GaAs-GaSb nanowires on GaAs (111)B substrates. The growth behavior and structural properties of the obtained GaSb nanowires are further investigated and compared with the Au-seeded counterparts. The results provided by this study demonstrate that Sn is a promising seed material for the growth of GaSb nanowires. |
| Databáze: | OpenAIRE |
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