| Popis: |
As a novel two-dimensional (2D) semiconductor material with biocompatibility and ferromagnetic properties, Nb3Cl8 exhibits a great prospect in the field of implantable electrical equipment. In this work, the effects of the light illumination and the gate voltage on the desorption of O2 molecules from Nb3Cl8 were systemically investigated via the in situ electrical transport characterization in the vacuum environment. The experimental results showed that the light illumination and the negative gate voltage could enhance the desorption of oxygen molecules while the positive gate voltage could promote the re-adsorption of O2. The multi-bit storage function was demonstrated via adjusting the p-doping effect caused by oxygen adsorption. A novel mechanism of optical writing and electrical erasing in this Nb3Cl8 memristor was proposed, which was in coincidence with the expected results of the control experiment in air. These results shed light on the great potential of Nb3Cl8 in high-density data storage, neuromorphic, wearable applications and implantable devices application. This work was financially supported by the National Natural Science Foundation of China (Nos. 62074025 and 52002051), the Applied Basic Research Program of Sichuan Province (No. 2020ZYD014), Sichuan Province Key Laboratory of Display Science and Technology, Postdoctoral Innovative Talent Supporting Program (No. BX20190060), China Postdoctoral Science Foundation (No. 2019M663463) and the Fundamental Research Funds for the Central Universities, SCUT (No. ZYGX2020J009). |
