Mapping charge carrier density in organic thin-film transistors by time-resolved photoluminescence lifetime studies
| Autor: | Jonathan R. Brewer, Jacek Fiutowski, Yiming Liu, Horst-Günter Rubahn, Per B.W. Jensen, Jakob Kjelstrup-Hansen, Till Leißner |
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| Rok vydání: | 2017 |
| Předmět: |
Photoluminescence
Materials science Gate dielectric 02 engineering and technology Dielectric 010402 general chemistry 01 natural sciences law.invention Biomaterials Condensed Matter::Materials Science law Materials Chemistry Electrical measurements Electrical and Electronic Engineering business.industry Transistor Biasing General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Thin-film transistor Optoelectronics Charge carrier 0210 nano-technology business |
| Zdroj: | Leißner, T, Jensen, P B W, Liu, Y, Brewer, J R, Fiutowski, J, Rubahn, H-G & Kjelstrup-Hansen, J 2017, ' Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies ', Organic Electronics, vol. 49, pp. 69-75 . https://doi.org/10.1016/j.orgel.2017.06.043 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2017.06.043 |
| Popis: | The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO 2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier distribution between source and drain electrodes of the transistor for different biasing conditions. We observe the expected hole density gradient from source to drain electrode. |
| Databáze: | OpenAIRE |
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