Engineering strain and conductivity of MoO3 by ion implantation
| Autor: | Eduardo Alves, Carlos Díaz-Guerra, José G. Marques, J. G. Correia, Ana G. Silva, Sérgio Ricardo Magalhães, Katharina Lorenz, Marco Peres, Daniela R. Pereira |
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| Přispěvatelé: | Repositório da Universidade de Lisboa |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Polymers and Plastics Metals and Alloys Analytical chemistry Oxide 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Fluence Electronic Optical and Magnetic Materials chemistry.chemical_compound Lattice constant Ion implantation chemistry Electrical resistivity and conductivity Phase (matter) 0103 physical sciences Ceramics and Composites Orthorhombic crystal system 0210 nano-technology |
| Zdroj: | Acta Materialia. 169:15-27 |
| ISSN: | 1359-6454 |
| DOI: | 10.1016/j.actamat.2019.02.029 |
| Popis: | α-MoO3 lamellar crystals are implanted with 170 keV oxygen ions at room temperature and with fluences between 1 × 1012 cm−2 and 1 × 1017 cm−2, in order to modify the electrical and structural properties of the crystals. A controllable and significant increase of the electrical conductivity, over several orders of magnitude, is observed after implantation at high fluences. Based on high resolution X-ray diffraction (HRXRD) and micro-Raman spectroscopy measurements, this effect is attributed to the formation of donor-type defect complexes and new phases more conductive than the α-MoO3 orthorhombic phase. A significant expansion of the b lattice parameter, increasing with fluence, is observed as a response to the defects created by implantation. Strain build-up occurs in several steps and in distinct depth regions within the implanted layer. Contrary to the typical values reported for other implanted oxide materials, an unusually high maximum perpendicular deformation of ∼3% is verified. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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