Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes
| Autor: | Tim D. Veal, M. J. Ashwin, Ian C. Sandall, Zhongming Cao, Karl Dawson |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Diffraction Materials science Annealing (metallurgy) business.industry Schottky barrier General Physics and Astronomy chemistry.chemical_element Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Bismuth chemistry 0103 physical sciences Scanning transmission electron microscopy Optoelectronics Electrical performance 0210 nano-technology business Diode |
| Zdroj: | Journal of Applied Physics JOURNAL OF APPLIED PHYSICS |
| Popis: | The influence of postgrowth thermal annealing on GaSbBi Schottky barrier diodes has been investigated. The effects of the annealing temperature and time on the material quality and electrical characteristics of the diodes have been studied. The I-V characteristics indicated a better ideality factor and less leakage current at the reverse bias, as the annealing temperature increased up to 500 °C for a duration of 30 min. X-ray diffraction and scanning transmission electron microscope measurements were performed to verify that the bismuth composition was unaffected during the annealing process. Energy dispersive x-ray analysis indicated that Sb clustering occurs at high annealing temperatures, resulting in a concomitant degradation in the electrical performance. The optimum electrical characteristics of the diode were obtained with an annealing temperature of 500 °C for 30 min, resulting in an ideality factor of 1.3 being achieved. |
| Databáze: | OpenAIRE |
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