Spin relaxation and magnetoresistance in disordered organic semiconductors

Autor: Markus Wohlgenannt, W Wiebe Wagemans, van Fwa Frank Oost, Tho Duc Nguyen, PA Peter Bobbert, B Bert Koopmans
Přispěvatelé: Soft Matter and Biological Physics, Physics of Nanostructures, Eindhoven Hendrik Casimir institute
Jazyk: angličtina
Rok vydání: 2010
Předmět:
Zdroj: Synthetic Metals, 160(3-4), 223-229. Elsevier
ISSN: 0379-6779
DOI: 10.1016/j.synthmet.2009.06.002
Popis: Because of the light elements involved, the spin–orbit coupling in organic materials is small. Therefore, the spin of charged polarons in these materials is expected to be a well conserved quantity. The conviction in the community grows that the main source of spin relaxation is in fact the coupling of the polaron spin to the random hyperfine fields of the hydrogen nuclei. By considering reactions between polarons forming bipolarons or excitons in the presence of these hyperfine fields we explain line shapes of the intrinsic magnetoresistance observed in disordered organic semiconductors. We also show how these hyperfine fields determine the spin-diffusion length in these semiconductors and how this affects the magnetoresistance line shapes of organic spin valves.
Databáze: OpenAIRE