An X-ray diffraction study of the Si(111) (√3 × √3) R30°-indium reconstruction

Autor:	J. M. C. Thornton, R. G. van Silfhout, Paul B. Howes, M. S. Finney, G. F. Clark, C. Norris
Rok vydání:	1993
Předmět:	Diffraction Silicon Chemistry Momentum transfer chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Molecular physics Surfaces Coatings and Films Crystallography Monolayer X-ray crystallography Materials Chemistry Patterson function Structure factor Indium
Zdroj:	Surface Science. 291:99-109
ISSN:	0039-6028
Popis:	The structure of the (√3 × √3)R30° reconstruction induced by the adsorption of 1 3 of a monolayer of In on the Si(111) surface has been determined using surface X-ray diffraction. The fractional order Patterson function obtained from structure factor intensities at zero perpendicular momentum transfer (l = 0), indicates lateral displacement in the silicon surface atoms. Intensity profiles of fractional order rods and one integer order rod gives information concerning displacements normal to the surface of the silicon substrate. The indium adatoms are shown to occupy the 4-fold coordinated T4 sites above the second layer silicon atoms. Keating elastic strain energy minimisation has been used to determine relaxations down to the sixth layer of the bulk.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bb2a54ecad7e607f16b64f9cd21f2ac https://doi.org/10.1016/0039-6028(93)91481-4 Zobrazit plný text záznamu