Chemical environment and functional properties of highly crystalline ZnSnN2 thin films deposited by reactive sputtering at room temperature
| Autor: | S. Kassavetis, Patrice Miska, Panos Patsalas, Christine Gendarme, Pascal Boulet, Jean-François Pierson, Emile Haye, Stéphanie Bruyère, Jaafar Ghanbaja, Fahad Alnjiman, Franck Cleymand, Sébastien Diliberto |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology Nitride 01 natural sciences law.invention X-ray photoelectron spectroscopy law Sputtering 0103 physical sciences Crystallization Thin film ZnSnN2 Mossbauer spectrometry 010302 applied physics ZnSnN Renewable Energy Sustainability and the Environment optical and electrical properties Structure 021001 nanoscience & nanotechnology Mössbauer spectrometry Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry 0210 nano-technology Tin |
| Zdroj: | Solar Energy Materials and Solar Cells. 182:30-36 |
| ISSN: | 0927-0248 |
| Popis: | Zinc tin nitride (ZnSnN2) thin films have been deposited on glass and silicon substrates using a reactive co-sputtering process. Although the deposition temperature was limited to the room temperature, the films show a highly crystallization level and a strong preferred orientation in the [001] direction. The film composition, measured using energy dispersive X-ray spectroscopy and electron probe microanalysis, indicates a possible tin understoichiometry (or a zinc and a nitrogen overstoichiometry). As confirmed by transmission electron microscopy, the main oxygen contamination of the films results from oxidation of the grains boundaries after air exposure of the samples. X-ray photoelectron spectroscopy and Mossbauer spectrometry have been used to determine the chemical environment of atoms in the ZnSnN2 crystals. Both methods confirm that Sn4+ ions are bonded to nitrogen atoms and that the oxygen contamination results in the formation of Sn2+ ions. Zinc tin nitride exhibit an electron mobility at room temperature close to 3.8 cm2 V−1 s−1 and an optical band gap of 1.8 eV as measured independently from UV–visible spectrometry and ellipsometry. The results obtained in the present study confirm the suitability of ZnSnN2 thin films as an Earth abundant material for absorber layer in photovoltaic devices. |
| Databáze: | OpenAIRE |
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