Laser Visualization of the Development of Long Line-Type Mutli-Cell Upsets in Back-Biased SOI SRAMs
| Autor: | Kazunori Masukawa, Shigeru Ishii, Hiroaki Itsuji, Osamu Kawasaki, Kazuyuki Hirose, Daisuke Kobayashi, Takanori Narita, Daisuke Matsuura, Masahiro Kato |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Nuclear and High Energy Physics
two-photon absorption (TPA) Line length Silicon on insulator silicon-oninsulator (SOI) technologies 01 natural sciences Upset law.invention Optics law 0103 physical sciences Electronic engineering single-event upset (SEU) Electrical and Electronic Engineering Long line 010302 applied physics Physics static random access memory (SRAM) 010308 nuclear & particles physics business.industry Transistor Laser Multiple-cell upset (MCU) Visualization Nuclear Energy and Engineering business Random access |
| Zdroj: | IEEE Transactions on Nuclear Science. 65:346-353 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2017.2776169 |
| Popis: | Accepted: 2017-11-14 資料番号: SA1170249000 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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