In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz
| Autor: | Sebastien Fregonese, Didier Celi, M. De Matos, Marco Cabbia, Thomas Zimmer, Marina Deng |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Heterojunction bipolar transistor 020206 networking & telecommunications 02 engineering and technology 01 natural sciences Capacitance 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Calibration Embedding Optoelectronics Device under test Wafer Parasitic extraction business Realization (systems) |
| Zdroj: | 2020 94th ARFTG Microwave Measurement Symposium (ARFTG) |
| Popis: | In this paper, we present an in-situ thru-reflect-line (TRL) calibration and de-embedding kit that sets the reference plane in close proximity to the device under test. This is made possible thanks to the realization of the standards at the metal3 BEOL level, instead of the common meta1-8 solution. This novel calibration kit has been compared to classic TRL, both for parasitics assessment and by direct application on the active device (HBT) measurements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|