Stress gradient and structural properties of atmospheric and reduced pressure deposited polysilicon layers for micromechanical sensors
| Autor: | P. Lange, M.S. Benrakkad, J.M. Lopez-Villegas, Joan Ramon Morante, Josep Samitier, M. Kirsten |
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| Předmět: |
Stress gradient
Materials science Morphology (linguistics) Atmospheric pressure Metals and Alloys Analytical chemistry Chemical vapor deposition Condensed Matter Physics Grain size Surfaces Coatings and Films Electronic Optical and Magnetic Materials symbols.namesake Residual stress symbols Surface roughness Electrical and Electronic Engineering Raman spectroscopy Instrumentation |
| Zdroj: | Scopus-Elsevier |
| Popis: | In this paper we report the mechanical and the structural properties of thick polysilicon layers performed by using atmospheric pressure (ATM) and reduced pressure (RP) chemical vapour deposition in order to obtain minimum residual stress and stress gradient for micromachined released structures and minimum surface roughness, avoiding poor mechanical characteristics in the performed sensors. Stress profile analysis was carried out by using Raman spectroscopy. Complementary TEM, XRD and AFM measurements have also been performed to aid the explanation of the experimental results, taking into account the morphology data, defect density, surface roughness, grain size and crystallographic directions. Finally, comparison with the data deduced from mechanical test structures was carried out. |
| Databáze: | OpenAIRE |
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