Effects on linearity in Ka band of single or double recess PHEMTs
| Autor: | B. Carnez, F. Bue, Christophe Gaquiere, P. Delemotte, Y. Crosnier, D. Pons |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), United Monolithic Semiconductors (UMS) |
| Jazyk: | angličtina |
| Rok vydání: | 2000 |
| Předmět: |
Materials science
genetic structures General Physics and Astronomy Topology (electrical circuits) High-electron-mobility transistor Topology TV [SPI]Engineering Sciences [physics] Linearity Current density Ka band Voltage source Quadrature amplitude modulation business.industry General Engineering Electrical engineering Impedance Biasing Voltage Input impedance Video on demand musculoskeletal system eye diseases Associate members Optoelectronics sense organs business human activities Intermodulation Power generation |
| Zdroj: | IEEE Microwave and Guided Wave Letters IEEE Microwave and Guided Wave Letters, Institute of Electrical and Electronics Engineers (IEEE), 2000, 10, pp.267-269 IEEE Microwave and Guided Wave Letters, 2000, 10 (7), pp.267-269. ⟨10.1109/75.856984⟩ |
| ISSN: | 1051-8207 |
| DOI: | 10.1109/75.856984⟩ |
| Popis: | International audience; The effects of the gate recess topologies on the linearity performance of PHEMT's have been investigated in the Ka band. The authors highlight the reasons why, at a given output power level, the double recessed device exhibits a very large improvement of its intermodulation performance as its drain source bias voltage is increased whereas its linearity is inferior to that of the single recessed device at low drain source bias voltage. The effect of the load impedance on the linearity behavior has also been investigated. At a given output power the load impedance contour of the double recess structure is shown to exhibit a much larger variation of the intermodulation ratio than that of the single recess structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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