High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
| Autor: | A. Chevy, Juan P. Martínez-Pastor, Alfredo Segura |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Electron mobility
Infrared Spectra Annealing (metallurgy) Analytical chemistry General Physics and Astronomy chemistry.chemical_element Annealing chemistry.chemical_compound FÍSICA [UNESCO] Hall effect Impurity Electrical resistivity and conductivity Tin Additions Selenide Doped Materials Indium Selenides Hall Effect Condensed matter physics Temperature Dependence Doping UNESCO::FÍSICA Electric Conductivity Impurities Deep Energy Levels chemistry Indium |
| Zdroj: | MARTÍNEZ PASTOR, J. ; SEGURA, A. ; CHEVY, A. High-temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin-doped indium selenide. En: Journal of Applied Physics, 1993, vol. 74, no. 5 RODERIC. Repositorio Institucional de la Universitat de Valéncia instname |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.354597 |
| Popis: | A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis can be explained by the observed increase of the 3D electron concentration, whose motion across the layers is limited by stacking‐fault‐related potential barriers. The observed macroscopic resistivity is thus determined by tunneling through those barriers. Juan.Mtnez.Pastor@uv.es |
| Databáze: | OpenAIRE |
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