Growth of high-quality single-wall carbon nanotubes without amorphous carbon formation

Autor: William I. Milne, Kenneth B. K. Teo, Krzysztof K. K. Koziol, S. H. Dalal, Rodrigo G. Lacerda, Aun Shih Teh, Gehan A. J. Amaratunga, Debdulal Roy, F. Wyczisk, M. H. Yang, Nalin L. Rupesinghe, David G. Hasko, Manish Chhowalla, Pierre Legagneux
Rok vydání: 2004
Předmět:
Zdroj: Applied Physics Letters. 84:269-271
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.1639509
Popis: We report an alternative way of preparing high-quality single-wall carbon nanotubes (SWCNTs). Using a triple-layer thin film of Al/Fe/Mo (with Fe as a catalyst) on an oxidized Si substrate, the sample is exposed to a single short burst (5 s) of acetylene at 1000 °C. This produced a high yield of very well graphitized SWCNTs, as confirmed by transmission electron microscopy and Raman spectroscopy. We believe that the high temperature is responsible for the high crystallinity/straightness of the nanotubes, and the rapid growth process allows us to achieve a clean amorphous carbon (a-C) free deposition which is important for SWCNT device fabrication. The absence of a-C is confirmed by Auger electron spectroscopy, Raman spectroscopy, and electrical measurements.
Databáze: OpenAIRE