Characteristics of n-CuInSe2/Au Schottky diodes
Autor: | J. Sobhanadri, D. Sridevi, D. Krishna Rao, J. J. B. Prasad, K.V. Reddy, J. Majhi |
---|---|
Rok vydání: | 1985 |
Předmět: |
SCHOTTKY DIODES
Chemistry business.industry Schottky barrier SEMICONDUCTOR DIODES Schottky diode Condensed Matter Physics Metal–semiconductor junction PLANAR SCHOTTKY DIODES Electronic Optical and Magnetic Materials Planar Optics Materials Chemistry Optoelectronics Electrical and Electronic Engineering business SEMICONDUCTOR DEVICES SCHOTTKY BARRIER - Electric Properties Diode |
Zdroj: | Solid-State Electronics. 28:1251-1254 |
ISSN: | 0038-1101 |
DOI: | 10.1016/0038-1101(85)90050-4 |
Popis: | The n -CuInSe 2 /Au point-contact Schottky diode was studied using current-voltage and capacitance-voltage measurements. Various important physical parameters of these diodes were derived from both measurements, and these values are comparable with the results reported on planar Schottky diodes. |
Databáze: | OpenAIRE |
Externí odkaz: |