Characteristics of n-CuInSe2/Au Schottky diodes

Autor: J. Sobhanadri, D. Sridevi, D. Krishna Rao, J. J. B. Prasad, K.V. Reddy, J. Majhi
Rok vydání: 1985
Předmět:
Zdroj: Solid-State Electronics. 28:1251-1254
ISSN: 0038-1101
DOI: 10.1016/0038-1101(85)90050-4
Popis: The n -CuInSe 2 /Au point-contact Schottky diode was studied using current-voltage and capacitance-voltage measurements. Various important physical parameters of these diodes were derived from both measurements, and these values are comparable with the results reported on planar Schottky diodes.
Databáze: OpenAIRE