A High Voltage High Frequency Resonant Inverter for Supplying DBD Devices with Short Discharge Current Pulses
| Autor: | Julio Brandelero, Xavier Bonnin, Thierry Meynard, Hubert Piquet, Nicolas Videau |
|---|---|
| Přispěvatelé: | LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, CIRTEM (CIRTEM), Groupe ENergie Electrique et SYStémique (LAPLACE-GENESYS), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Convertisseurs Statiques (LAPLACE-CS), Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - INPT (FRANCE), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), CIRTEM (FRANCE), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE) |
| Rok vydání: | 2014 |
| Předmět: |
Dielectric Barrier Discharge
Energie électrique Electric Discharge Power Supply Materials science Pulsed power Inductor Resonance 7. Clean energy GaN High voltage law.invention Plasma Transformerless High frequency law Maximum power transfer theorem Inverter Electrical and Electronic Engineering Transformer Resonant inverter business.industry [SPI.NRJ]Engineering Sciences [physics]/Electric power Wide bandgap Electrical engineering Mega-hertz Optoelectronics DBD business Dielectric barrier discharges (DBD) Voltage |
| Zdroj: | IEEE Transactions on Power Electronics IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2014, vol. 29 (n° 8), pp. 4261-4269. ⟨10.1109/TPEL.2013.2295525⟩ |
| ISSN: | 1941-0107 0885-8993 |
| DOI: | 10.1109/tpel.2013.2295525 |
| Popis: | International audience; In this paper, the merits of a high-frequency resonant converter for supplying dielectric barrier discharges (DBD) devices are established. It is shown that, thanks to its high-frequency operating condition, such a converter allows to supply DBD devices with short discharge current pulses, a high repetition rate, and to control the injected power. In addition, such a topology eliminates the matter of connecting a high-voltage transformer directly across the DBD device and avoids the issues related to the parasitic capacitances of the latter which disturbs the control the power transfer to the plasma. The design issues of the converter, including the inverter and its switches, the resonant inductor, and the parameter drift compensation are studied. An experimental validation is performed: a mega Hertz resonant converter using GaN FET switches has been manufactured and tested with an excimer lamp. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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