Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current
| Autor: | Fritz J. Kub, Sarah K. Haney, Anant K. Agarwal, H.L. Hughes, Eugene A. Imhoff, Marko J. Tadjer, Robert E. Stahlbush, P.J. McMarr, Karl D. Hobart |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Transistor Condensed Matter Physics Acceptor Space charge Electronic Optical and Magnetic Materials Threshold voltage law.invention Capacitor law Electric field MOSFET Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 39:517-525 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-009-1058-y |
| Popis: | Carrier traps in 4H-SiC metal–oxide–semiconductor (MOS) capacitor and transistor devices were studied using the thermally stimulated current (TSC) method. TSC spectra from p-type MOS capacitors and n-channel MOS field-effect transistors (MOSFETs) indicated the presence of oxide traps with peak emission around 55 K. An additional peak near 80 K was observed due to acceptor activation and hole traps near the interface. The physical location of the traps in the devices was deduced using a localized electric field approach. The density of hole traps contributing to the 80-K peak was separated from the acceptor trap density using a gamma-ray irradiation method. As a result, hole trap density of N t,hole = 2.08 × 1015 cm−3 at 2 MV/cm gate field and N t,hole = 2.5 × 1016 cm−3 at 4.5 MV/cm gate field was extracted from the 80-K TSC spectra. Measurements of the source-body n +–p junction suggested the presence of implantation damage in the space-charge region, as well as defect states near the n + SiC substrate. |
| Databáze: | OpenAIRE |
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