Si doped GaP layers grown on Si wafers by low temperature PE-ALD
| Autor: | Alexander S. Gudovskikh, A. A. Bukatin, E.V. Nikitina, D. A. Kudryashov, Ivan A. Morozov, K. S. Zelentsov, Alexandra Levtchenko, S. Le Gall, Artem Baranov, A. V. Uvarov, Ivan Mukhin, Jean-Paul Kleider |
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| Přispěvatelé: | Saint Petersburg University (SPBU), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Saint-Petersburg Scientific Center, Russian Academy of Sciences [Moscow] (RAS), PHC Kolmogorov Program (35522TL), PRC PacSific, Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris-Sud - Paris 11 (UP11) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Silicon Renewable Energy Sustainability and the Environment business.industry Doping [SPI.NRJ]Engineering Sciences [physics]/Electric power chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 7. Clean energy 01 natural sciences chemistry.chemical_compound Atomic layer deposition Band bending chemistry 0103 physical sciences Gallium phosphide [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics Trimethylgallium 0210 nano-technology business |
| Zdroj: | Journal of Renewable and Sustainable Energy Journal of Renewable and Sustainable Energy, AIP Publishing, 2018, 10 (021001), pp.021001. ⟨10.1063/1.5000256⟩ |
| ISSN: | 1941-7012 |
| Popis: | International audience; Low-temperature plasma enhanced atomic layer deposition (PE-ALD) was successfully used to grow silicon (Si) doped amorphous and microcrystalline gallium phosphide (GaP) layers onto p-type Si wafers for the fabrication of n-GaP/p-Si heterojunction solar cells. PE-ALD was realized at 380 °C with continuous H2 plasma discharge and the alternate use of phosphine and trimethylgallium as sources of P and Ga atoms, respectively. The layers were doped with silicon thanks to silane (SiH4) diluted in H2 that was introduced as a separated step. High SiH4 dilution in H2 (0.1%) allows us to deposit stoichiometric GaP layers. Hall measurements performed on the GaP:Si/p-Si structures reveal the presence of an n-type layer with a sheet electron density of 6–10 × 1013 cm−2 and an electron mobility of 13–25 cm2 V−1 s−1 at 300 K. This is associated with the formation of a strong inversion layer in the p-Si substrate due to strong band bending at the GaP/Si interface. GaP:Si/p-Si heterostructures exhibit a clear photovoltaic effect, with the performance being currently limited by the poor quality of the p-Si wafers and reflection losses at the GaP surface. This opens interesting perspectives for Si doped GaP deposited by PE-ALD for the fabrication of p-Si based heterojunction solar cells. |
| Databáze: | OpenAIRE |
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