Electrical and photoelectric properties of heterostructures NiO/p-CdTe and NiO/n-CdTe

Autor:	H. P. Parkhomenko, P. D. Maryanchuk
Rok vydání:	2016
Předmět:	heterojunctions charge transport mechanisms Materials science thin film business.industry Non-blocking I/O Heterojunction CdTe Photoelectric effect Cadmium telluride photovoltaics NiO Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering business lcsh:TK1-9971
Zdroj:	Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4-5, Pp 29-33 (2016)
ISSN:	2309-9992 2225-5818
Popis:	In this study, we investigate the electrical and photoelectric properties of heterostructures formed by the reactive magnetron sputtering of thin film NiO onto p-CdTe and n-CdTe substrates. The current-voltage characteristics of the heterojunctions were measured at room temperature. The dominating current transport mechanisms through the NiO/n-CdTe and NiO/p-CdTe heterojunctions at the forward biases are generation-recombination and tunnel, at the reverse biases is tunnel current transport mechanisms. The heterojunctions under investigation generate open-circuit voltage Uoc = 0.26 V and short-circuit current Isc = 58.7 µÀ/cm2 under illumination 80 mW/cm–2. The research results can be used for better understanding of the processes occurring in heterojunctions NiO/n-CdTe and NiO/p-CdTe, to further improve their properties and parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a7235392df5dc5b723bc7f75e9459a4 https://doi.org/10.15222/tkea2016.4-5.29 Zobrazit plný text záznamu