Low loss SOI-based high-mesa waveguides fabricated using neutral loop discharge (NLD) plasma etching for compact breath-sensing system

Autor:	Kiichi Hamamoto, Satoshi Yano, Kosuke Kameyama
Rok vydání:	2007
Předmět:	Loop (topology) Materials science Plasma etching law business.industry Analytical chemistry Silicon on insulator Optoelectronics Plasma business Waveguide Sensing system law.invention
Zdroj:	Scopus-Elsevier
DOI:	10.1364/ipnra.2007.iwa7
Popis:	SOI-based Si/SiO2high-mesa waveguide has been fabricated by using neutral loop discharge (NLD) plasma etching. Significant loss reduction of about 50%, resulted in 0.3dB/cm propagation loss, has been achieved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a654b01ed2ffcbfe50b7cf5d4c6d9a6 https://doi.org/10.1364/ipnra.2007.iwa7 Zobrazit plný text záznamu