Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability

Autor: Mathieu Moreau, Hassen Aziza, J-M. Portal, Marc Bocquet, Santhosh Onkaraiah, Haithem Ayari
Přispěvatelé: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: 2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)
2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), Oct 2014, Amsterdam, Netherlands. ⟨10.1109/DFT.2014.6962107⟩
DFT
DOI: 10.1109/DFT.2014.6962107⟩
Popis: International audience; A deeper understanding of the impact of variability on Oxide-based Resistive Random Access Memory (so-called OxRRAM) is needed to propose variability tolerant designs to ensure the robustness of the technology. Although research has taken steps to resolve this issue, variability remains an important characteristic for OxRRAMs. In this paper, impact of variability on OxRRAM circuit performances is analysed quantitatively at a circuit level through electrical simulations. Variability is introduced at the memory cell level but also at the peripheral circuitry level. The aim of this study is to determine the contribution of each component of an OxRRAM circuit on the ON/OFF resistance ratio.
Databáze: OpenAIRE