Role of boron diffusion in CoFeB/MgO magnetic tunnel junctions
| Autor: | Johan Persson, Seyed Majid Mohseni, Abhijit Hazarika, Anindita Sahoo, Tuan Le, D. D. Sarma, Wolfgang Drube, Ronny Knut, Sebastian Thiess, Sumanta Mukherjee, T. N. Anh Nguyen, Mihaela Gorgoi, Banabir Pal, Johan Åkerman, Olof Karis, Sunjae Chung, P. S. Anil Kumar |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Diffraction
Materials science Magnetoresistance Condensed matter physics Annealing (metallurgy) Magnetic storage Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention X-ray photoelectron spectroscopy law Nanometre ddc:530 Boron diffusion Atomic physics Den kondenserade materiens fysik Quantum tunnelling |
| Zdroj: | Physical review / B 91(8), 085311 (2015). doi:10.1103/PhysRevB.91.085311 |
| DOI: | 10.1103/PhysRevB.91.085311 |
| Popis: | Several scientific issues concerning the latest generation read heads for magnetic storage devices, based on CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) are known to be controversial, including such fundamental questions as to the behavior and the role of B in optimizing the physical properties of these devices. Quantitatively establishing the internal structures of several such devices with different annealing conditions using hard x-ray photoelectron spectroscopy, we resolve these controversies and establish that the B diffusion is controlled by the capping Ta layer, though Ta is physically separated from the layer with B by several nanometers. While explaining this unusual phenomenon, we also provide insight into why the tunneling magnetoresistance (TMR) is optimized at an intermediate annealing temperature, relating it to B diffusion, coupled with our studies based on x-ray diffraction and magnetic studies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|