Sputtering of silicon nanopowders by an argon cluster ion beam
| Autor: | Wenbin Zuo, Dejun Fu, Zhenguo Wang, Xiangheng Xiao, Vasiliy O. Pelenovich, Alexander Tolstogouzov, Xiaomei Zeng, S. F. Belykh |
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| Přispěvatelé: | CeFITec – Centro de Física e Investigação Tecnológica, DF – Departamento de Física |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Yield (engineering)
Materials science Silicon Ion beam Physics::Instrumentation and Detectors Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Physics and Astronomy(all) lcsh:Chemical technology gas cluster ion beam lcsh:Technology 01 natural sciences Full Research Paper Finite size effect Materials Science(all) Sputtering 0103 physical sciences Surface roughness Nanotechnology lcsh:TP1-1185 General Materials Science Smoothing effect Electrical and Electronic Engineering lcsh:Science 010302 applied physics Range (particle radiation) Argon Gas cluster ion beam lcsh:T 021001 nanoscience & nanotechnology lcsh:QC1-999 Silicon nanoparticles silicon nanoparticles Nanoscience chemistry lcsh:Q sputtering 0210 nano-technology finite size effect lcsh:Physics smoothing effect |
| Zdroj: | Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 135-143 (2019) Beilstein Journal of Nanotechnology |
| Popis: | This study was supported by Wuhan Municipal Science and Technology Bureau grant No. 2017030209020250 and Shenzhen Municipal Committee on Science and Technology Innovation grant No. JCYJ20170818112901473, and partly by the Ministry of Education and Science of the Russian Federation within the framework of project no. 8.2810.2017. In this work an Ar + cluster ion beam with energy in the range of 10-70 keV and dose of 7.2 × 10 14 -2.3 × 10 16 cluster/cm 2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation. publishersversion published |
| Databáze: | OpenAIRE |
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