Optical characterization of deuterated silicon-rich nitride waveguides

Autor:	Xavier X. Chia, George F. R. Chen, Yanmei Cao, Peng Xing, Hongwei Gao, Doris K. T. Ng, Dawn T. H. Tan
Rok vydání:	2022
Předmět:	Multidisciplinary
Zdroj:	Scientific reports. 12(1)
ISSN:	2045-2322
Popis:	Chemical vapor deposition-based growth techniques allow flexible design of complementary metal-oxide semiconductor (CMOS) compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized, and we experimentally confirm that the silicon-rich nitride films grown with SiD4 eliminates Si–H and N–H related absorption. The performance of identical waveguides for films grown with SiH4 and SiD4 are compared demonstrating a 2 dB/cm improvement in line with that observed in literature. Waveguides fabricated on the SRN:D film are further shown to possess a nonlinear parameter of 95 W−1 m−1, with the film exhibiting a linear and nonlinear refractive index of 2.46 and 9.8 $$\times$$ × 10–18 m2W−1 respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29c5f613cb1a4aa96b8725773f59a821 https://pubmed.ncbi.nlm.nih.gov/35882882 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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