A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric
| Autor: | Riu Gao, Zhigang Ji, Sharifah Wan Muhamad Hatta, James Niblock, Steve Greer, Katie Wright, Peter Bachmayr, Lee Stauffer, Weidong Zhang, Jian Fu Zhang |
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| Rok vydání: | 2015 |
| Předmět: |
Spectrum analyzer
Engineering Work (thermodynamics) Fabrication business.industry Band gap Semiconductor device fabrication TK Gate dielectric Process (computing) Substrate (electronics) Condensed Matter Physics Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 28:221-226 |
| ISSN: | 1558-2345 0894-6507 |
| DOI: | 10.1109/tsm.2015.2407909 |
| Popis: | Characterizing positive charges and its energy distribution in gate dielectric is useful for process qualification. A discharge-based technique is introduced to extract their energy distribution both within and beyond substrate band gap. This work investigates the difficulties in its implementation on typical industrial parameter analyzer and provides solutions. For the first time, we demonstrate the technique’s applicability to the advanced 22 nm fabrication process and its capability in evaluating the impact of different strains on the energy distribution. The test time is within several hours. This, together with its implementation on industrial parameter analyzer, makes it a useful tool in the semiconductor manufacturing foundries for process monitoring and optimization. |
| Databáze: | OpenAIRE |
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