Dose Dependent Profile Deviation of Implanted Aluminum in 4H-SiC During High Temperature Annealing
| Autor: | Anton J. Bauer, Matthias Kocher, Mathias Rommel, Volker Häublein, Tomasz Sledziewski |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Dose dependence Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Secondary ion mass spectrometry chemistry Aluminium 0103 physical sciences 0210 nano-technology |
| Zdroj: | 2018 22nd International Conference on Ion Implantation Technology (IIT). |
| DOI: | 10.1109/iit.2018.8807904 |
| Popis: | The influence of the high temperature annealing on differently implanted Al profiles was investigated by SIMS measurements. Depending on the implanted dose and also depending on the local concentration a significant diffusion of the implanted Al was observed. Based on this results at least two necessary conditions of Al diffusion during high temperature annealing could be determined. |
| Databáze: | OpenAIRE |
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